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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 364376, 8 pages
Research Article

Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped S r T i O 3 Substrate

1School of Physics and Technology and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan University, Wuhan 430072, China
2School of Information Engineering, Hubei University for Nationalities, Enshi, Hubei 445000, China

Received 22 May 2012; Accepted 31 July 2012

Academic Editor: A. Alexandrov

Copyright © 2012 Yongdan Zhu and Meiya Li. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Epitaxial NiO film was grown on 0.7% Nb-doped S r T i O 3 substrates by pulsed laser deposition. The I-V characteristics of Ag/NiO/Nb- S r T i O 3 /In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb- S r T i O 3 junctions, and the resistive switching ratio 𝑅 H R S / 𝑅 L R S can reach 103 at the read voltage of −0.5 V. Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories. These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction.