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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 439617, 10 pages
Research Article

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

1Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, Russia
2Mathematical Department, Faculty of Radiophysics, Nizhny Novgorod State University, 65 Il’insky Street, Nizhny Novgorod 603950, Russia

Received 5 March 2012; Revised 1 June 2012; Accepted 15 June 2012

Academic Editor: Jörg Fink

Copyright © 2012 Marina G. Mynbaeva et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.