Journals
Publish with us
Publishing partnerships
About us
Blog
Advances in Condensed Matter Physics
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Advances in Condensed Matter Physics
/
2012
/
Article
/
Fig 3
/
Research Article
Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide
Figure 3
Modelled vacancy distribution in the vicinity of a pore in porous SiC before (curve 1) and after (curve 2) anneal at 1700°C for 120 min.