Research Article

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Figure 4

AFM morphologies of the ITiO film at different RF powers. (a) 220 W, (b) 250 W, (c) 280 W, (d) 300 W, (e) 350 W.
651587.fig.004a
(a)
651587.fig.004b
(b)
651587.fig.004c
(c)
651587.fig.004d
(d)
651587.fig.004e
(e)