Influence of Excitation Frequency on Raman Modes of In_𝟏−𝑥Ga_𝑥N Thin Films

Table 1

Room temperature electronic and optical properties of In_1−𝑥Ga_𝑥N thin films.

Sample	Thickness (μm)	Bandgap (eV)	Carrier concentration (cm^−3)	Mobility (cm^2/V·s)	Probing depth (μm) for laser excitation used
					514 nm	785 nm
GS1814 InN	0.6	0.77	1.3 × 10^18	900	<0.03	0.06
GS1651 In0.85Ga0.15N	0.5	0.96	1.43 × 10^18	700	<0.03	0.06
GS1942 In0.70Ga0.30N	0.5	1.27	2.3 × 10^18	140	<0.03	0.07
GS1651 In0.46Ga0.54N	0.4	1.85	1.1 × 10^18	20	0.06	0.16