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Advances in Condensed Matter Physics
Volume 2013, Article ID 308258, 11 pages
Research Article

Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

1Institute of Optical Materials and Technologies “Acad. J. Malinowski,” Bulgarian Academy of Sciences, Acad. G. Bonchev Street, Building 109, 1113 Sofia, Bulgaria
2Geological Institute, Bulgarian Academy of Sciences, Acad. G. Bonchev Street, Building 24, 1113 Sofia, Bulgaria
3Faculty of Physics, Sofia University “St. Kliment Ohridski,” 5 James Boucher Avenue, 1164 Sofia, Bulgaria

Received 4 March 2013; Revised 20 May 2013; Accepted 22 May 2013

Academic Editor: R. N. P. Choudhary

Copyright © 2013 R. Todorov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness between /20 and 2 (at  nm). The knowledge of the optical constants (refractive index, , and extinction coefficient, ) of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3 and GeS2 determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge)-S-Bi(Tl) films is observed. The profile of in depth of thin As-S-Tl (Bi) films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3 and metals or their compounds (Bi, Tl, In2S3).