Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application

<table>RBS spectrum of <svg height="15.825" id="M24" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 33.462502 15.825" width="33.462502" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.538)"><path d="M592 498l-30 -3q-13 63 -31 89q-13 19 -33.5 25.5t-75.5 6.5h-70v-493q0 -60 16 -75.5t86 -19.5v-28h-286v28q68 4 83.5 19.5t15.5 75.5v493h-62q-60 0 -83 -7t-33 -24q-12 -17 -32 -90h-29q10 116 12 180h20q10 -16 21 -20.5t34 -4.5h395q19 0 28.5 5t21.5 20h21
q2 -89 11 -177z" id="x54"></path></g><g transform="matrix(.017,-0,0,-.017,8.868,11.538)"><path d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" id="x69"></path></g><g transform="matrix(.017,-0,0,-.017,13.424,11.538)"><path d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" id="x4F"></path></g>
<g transform="matrix(.012,-0,0,-.012,26.125,15.613)"><path d="M536 404q0 -17 -13.5 -31.5t-26.5 -14.5q-8 0 -15 10q-11 14 -25 14q-22 0 -67 -50q-47 -52 -68 -82l37 -102q31 -88 55 -88t78 59l16 -23q-32 -48 -68.5 -78t-65.5 -30q-19 0 -37.5 20t-29.5 53l-41 116q-72 -106 -114.5 -147.5t-79.5 -41.5q-21 0 -34.5 14t-13.5 37
q0 16 13.5 31.5t28.5 15.5q12 0 17 -11q5 -10 25 -10q22 0 57.5 36t89.5 111l-40 108q-22 58 -36 58q-21 0 -67 -57l-19 20q81 107 125 107q17 0 30 -22t39 -88l22 -55q68 92 108.5 128.5t74.5 36.5q20 0 32.5 -14t12.5 -30z" id="x1D465"></path></g>
</svg> thin film (S25) on p-Si (100) substrate.</table>

Advances in Condensed Matter Physics

fig3

Figure 3

Figure 3: Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application 