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Advances in Condensed Matter Physics
Volume 2013, Article ID 409620, 11 pages
http://dx.doi.org/10.1155/2013/409620
Research Article

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4 for Optical and LTCC Applications

1Electronic Materials Research Laboratory, Department of Physics, Mar Ivanios College, Thiruvananthapuram, Kerala 695015, India
2Dielectric Materials Research Laboratory, Department of Physics, St. John’s College, Anchal, Kollam District, Kerala 691306, India

Received 30 May 2013; Accepted 5 August 2013

Academic Editor: Jörg Fink

Copyright © 2013 S. Vidya et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Synthesis of nano-BaWO4 by a modified combustion technique and its suitability for various applications are reported. The structure and phase purity of the sample analyzed by X-ray diffraction, Fourier transform Raman, and infrared spectroscopy show that the sample is phase pure with tetragonal structure. The particle size from the transmission electron microscopy is 22 nm. The basic optical properties and optical constants of the nano BaWO4 are studied using UV-visible absorption spectroscopy which showed that the material is a wide band gap semiconductor with band gap of 4.1 eV. The sample shows poor transmittance in ultraviolet region while maximum in visible-near infrared regions. The photoluminescence spectra show intense emission in blue region. The sample is sintered at low temperature of 810°C, without any sintering aid. Surface morphology of the sample is analyzed by scanning electron microscopy. The dielectric constant and loss factor measured at 5 MHz are 9 and . The temperature coefficient of dielectric constant is −22 ppm/°C. The experimental results obtained in the present work claim the potential use of nano BaWO4 as UV filters, transparent films for window layers on solar cells, antireflection coatings, scintillators, detectors, and for LTCC applications.