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Advances in Condensed Matter Physics
Volume 2013, Article ID 692364, 6 pages
http://dx.doi.org/10.1155/2013/692364
Research Article

Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications

Nanoelectronics Laboratory, Department of Nanoscience and Nanotechnology, Alagappa University, Karaikudi 630 003, India

Received 6 February 2013; Accepted 7 May 2013

Academic Editor: R. N. P. Choudhary

Copyright © 2013 S. R. Krishnamoorthi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. R. Krishnamoorthi, K. S. Venkatesh, and Rajangam Ilangovan, “Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications,” Advances in Condensed Matter Physics, vol. 2013, Article ID 692364, 6 pages, 2013. https://doi.org/10.1155/2013/692364.