Table of Contents Author Guidelines Submit a Manuscript
Advances in Condensed Matter Physics
Volume 2013 (2013), Article ID 739078, 4 pages
Research Article

Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

Department of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China

Received 31 May 2013; Accepted 24 July 2013

Academic Editor: Haiyan Xiao

Copyright © 2013 Deng-Feng Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of single can be lowered by introducing the (III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.