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Advances in Condensed Matter Physics
Volume 2014, Article ID 301302, 30 pages
http://dx.doi.org/10.1155/2014/301302
Review Article

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium

Received 19 June 2013; Accepted 27 October 2013; Published 13 February 2014

Academic Editor: Victor V. Moshchalkov

Copyright © 2014 Valeri V. Afanas'ev. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Valeri V. Afanas'ev, “Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study,” Advances in Condensed Matter Physics, vol. 2014, Article ID 301302, 30 pages, 2014. https://doi.org/10.1155/2014/301302.