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Advances in Condensed Matter Physics
Volume 2014, Article ID 857907, 9 pages
http://dx.doi.org/10.1155/2014/857907
Research Article

Modeling Surface Recombination at the p-Type Interface via Dangling Bond Amphoteric Centers

Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat, Kuwait

Received 1 November 2013; Accepted 2 February 2014; Published 12 March 2014

Academic Editor: Mohindar S. Seehra

Copyright © 2014 Moustafa Y. Ghannam and Husain A. Kamal. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Moustafa Y. Ghannam and Husain A. Kamal, “Modeling Surface Recombination at the p-Type Interface via Dangling Bond Amphoteric Centers,” Advances in Condensed Matter Physics, vol. 2014, Article ID 857907, 9 pages, 2014. https://doi.org/10.1155/2014/857907.