Modeling Surface Recombination at the p-Type Interface via Dangling Bond Amphoteric Centers
Figure 2
(a) SRH and amphoteric center surface recombination velocity and as a function of excess electron concentration assuming all capture cross-sections are equal, , for , 0.1 V and 0.2 V. (b) Amphoteric center surface recombination velocity as a function of excess electron concentration assuming all capture cross-sections are equal for and 0.4 eV, for , 0.1 V and 0.2 V.
