Modeling Surface Recombination at the p-Type Si/SiO₂ Interface via Dangling Bond Amphoteric Centers

Figure 4

(a) Effective surface recombination velocity as a function of excess electron concentration for both SRH and amphoteric center recombination for 𝜓_𝑠=0.2 V, 𝐸_corr=0.4 eV with 𝜎_𝑛/𝜎_𝑝=𝜎⁰_𝑛/𝜎⁰_𝑝=1 for several combinations of 𝑅_𝑛=𝜎⁺_𝑛/𝜎⁰_𝑛 and 𝑅_𝑝=𝜎⁻_𝑛/𝜎⁰_𝑝. (b) Effective surface recombination velocity as a function of excess electron concentration for both SRH and amphoteric center recombination for 𝜓_𝑠=0.2 V, 𝐸_corr=0.4 eV with 𝜎_𝑛/𝜎_𝑝=𝜎⁰_𝑛/𝜎⁰_𝑝=1, 𝑅_𝑛=𝑅_𝑝=10, and 𝑅_𝑛=𝑅_𝑝=100.

(a)

(b)