Tin-Doped Indium Oxide-Titania Core-Shell Nanostructures for Dye-Sensitized Solar Cells

Table 2

Photovoltaic properties of devices before and after the insertion of a compact HfO₂ blocking layer by ALD^a.

	(V)	(mA⋅cm^−2)	FF (%)	(%)	Dye loading (×10^−8 mol⋅cm^−2)
Without HfO2	0.53 ± 0.03	12.61 ± 0.05	50.7 ± 0.6	3.39 ± 0.05	1.32
With HfO2	0.67 ± 0.05	16.50 ± 0.06	52.7 ± 0.9	5.83 ± 0.07	1.36

Average values and standard deviations are based on 3-4 devices.