(112) Surface of CuInSe₂ Thin Films with Doped Cd Atoms

Figure 5

(a) The site projected density of states (PDOS) of the surface layer with defect pair (the lower panel) and the third layer (the upper panel). (b) PDOS of Cd, In, and Se atoms in the relaxed surface and the DOS of the third layer is shown for reference, marked as “CIS.” The dash line in (b) represents the valence band maximum of the bulk CIS.

(a)

(b)