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Advances in Condensed Matter Physics
Volume 2015, Article ID 267680, 7 pages
Research Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

University of Electronic Science and Technology of China, Chengdu 610054, China

Received 26 February 2015; Revised 5 June 2015; Accepted 17 June 2015

Academic Editor: Ashok Chatterjee

Copyright © 2015 Chao Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F in the passivation layer not only extends the depletion region and thus enhances the average electric field (-field) between the gate and drain by the assisted depletion effect but also reduces the -field peak at the gate end, leading to a higher breakdown voltage (BV). Second, in the AlGaN channel region, the F region realizes the E-mode and the region without F maintains a high drain current (). Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current () by 28%.