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Advances in Condensed Matter Physics
Volume 2015, Article ID 267680, 7 pages
http://dx.doi.org/10.1155/2015/267680
Research Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

University of Electronic Science and Technology of China, Chengdu 610054, China

Received 26 February 2015; Revised 5 June 2015; Accepted 17 June 2015

Academic Editor: Ashok Chatterjee

Copyright © 2015 Chao Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. T. P. Chow and R. Tyagi, “Wide bandgap compound semiconductors for superior high-voltage unipolar power devices,” IEEE Transactions on Electron Devices, vol. 41, no. 8, pp. 1481–1483, 1994. View at Publisher · View at Google Scholar · View at Scopus
  2. O. Ambacher, B. Foutz, J. Smart et al., “Polarization induced effects in AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 87, no. 1, pp. 334–344, 2000. View at Google Scholar
  3. S. D. Burnham, K. Boutros, P. Hashimoto et al., “Gate-recessed normally-off GaN-on-Si HEMT using a new O2- BCl3 digital etching technique,” Physica Status Solidi C: Current Topics in Solid State Physics, vol. 7, no. 7-8, pp. 2010–2012, 2010. View at Publisher · View at Google Scholar · View at Scopus
  4. X. Hu, G. Simin, J. Yang, M. A. Khan, R. Gaska, and M. S. Shur, “Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate,” Electronics Letters, vol. 36, no. 8, pp. 753–754, 2000. View at Publisher · View at Google Scholar · View at Scopus
  5. Y. Ohmaki, M. Tanimoto, S. Akamatsu, and T. Mukai, “Enhancement-mode AlGaN/AlN/GaN high electron mobility transistor with low on-state resistance and high breakdown voltage,” Japanese Journal of Applied Physics, vol. 45, no. 42–45, pp. L1168–L1170, 2006. View at Publisher · View at Google Scholar · View at Scopus
  6. T. Mizutani, M. Ito, S. Kishimoto, and F. Nakamura, “AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation,” IEEE Electron Device Letters, vol. 28, no. 7, pp. 549–551, 2007. View at Publisher · View at Google Scholar · View at Scopus
  7. H. Chen, M. Wang, and K. J. Chen, “Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation,” in Proceedings of the 68th Device Research Conference (DRC '10), pp. 137–138, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  8. Y. Cai and K. J. Chen, “High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,” IEEE Electron Device Letters, vol. 26, no. 7, pp. 435–437, 2005. View at Google Scholar
  9. L. Pang, Y. Lian, D.-S. Kim, J.-H. Lee, and K. Kim, “AlGaN/GaN MOSHEMT with high-quality gate-SiO2 achieved by room-temperature radio frequency magnetron sputtering,” IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2650–2655, 2012. View at Publisher · View at Google Scholar · View at Scopus
  10. T. Sato, J. Okayasu, M. Takikawa et al., “AlGaN-GaN metal-insulator semiconductor high-electron-mobility transistors with very high-k oxynitride TaOxNy gate dielectric,” IEEE Electron Device Letters, vol. 34, no. 3, pp. 375–377, 2013. View at Google Scholar
  11. O. Seok, W. Ahn, M.-K. Han, and M.-W. Ha, “High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators,” Semiconductor Science and Technology, vol. 28, no. 2, Article ID 025001, 2013. View at Publisher · View at Google Scholar · View at Scopus
  12. Y.-S. Kim, J. Lim, O.-G. Seok, and M.-K. Han, “High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment,” in Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD '11), pp. 251–255, San Diego, Calif, USA, May 2011. View at Publisher · View at Google Scholar · View at Scopus
  13. Z. Tang, Q. Jiang, Y. Lu et al., “600V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,” IEEE Electron Device Letters, vol. 34, no. 11, pp. 1373–1375, 2013. View at Google Scholar
  14. M. Wang, Y. Wang, C. Zhang et al., “900V/1.6 mΩ·cm2 normally-off Al2O3-GaN MOS-FET on silicon substrate,” IEEE Transactions on Electron Devices, vol. 61, no. 6, pp. 2035–2040, 2014. View at Publisher · View at Google Scholar