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Advances in Condensed Matter Physics
Volume 2015, Article ID 312646, 5 pages
Research Article

Design of a Novel W-Sinker RF LDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China

Received 13 November 2014; Accepted 26 November 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiangming Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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