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Advances in Condensed Matter Physics
Volume 2015, Article ID 312646, 5 pages
http://dx.doi.org/10.1155/2015/312646
Research Article

Design of a Novel W-Sinker RF LDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China

Received 13 November 2014; Accepted 26 November 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiangming Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. A. Wood, C. Dragon, and W. Burger, “High performance silicon LDMOS technology for 2GHz RF power amplifier applications,” in Proceedings of the IEEE International Electron Devices Meeting, pp. 87–90, December 1996. View at Scopus
  2. H. F. F. Jos, “Novel LDMOS structure for 2 GHz high power basestation application,” in Proceedings of the 28th European Microwave Conference, pp. 739–744, 1998.
  3. H. Brech, W. Brakensiek, D. Burdeaux et al., “Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations,” in Proceedings of the IEEE International Electron Devices Meeting—Technical Digest, pp. 359–362, December 2003. View at Scopus
  4. F. van Rijs and S. J. C. H. Theeuwen, “Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit,” in Proceedings of the International Electron Devices Meeting (IEDM '06), pp. 1–4, San Francisco, Calif, USA, December 2006.
  5. F. van Rijs, “Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications,” in Proceedings of the IEEE Radio and Wireless Symposium (RWS '08), pp. 69–72, Orlando, Fla, USA, January 2008. View at Publisher · View at Google Scholar · View at Scopus
  6. S. J. C. H. Theeuwen and H. Mollee, “S-band radar LDMOS transistors,” in Proceedings of the 4th European Microwave Integrated Circut Conference (EuMIC '09), pp. 53–56, 2009.
  7. R. Pengelly, D. Vye, L. Pelletier et al., “The new power brokers: high voltage RF devices,” Microwave Journal, vol. 52, no. 6, pp. 22–40, 2009. View at Google Scholar · View at Scopus
  8. K. Werner and S. Theeuwen, “RF driven plasma lighting—the next revolution in light sources are powered by solid state RF technology,” Microwave Journal, vol. 12, pp. 68–74, 2010. View at Google Scholar
  9. P. H. Aaen, Modeling and Characterization of RF and Microwave Power FETs, chapter 1, 2007.
  10. S. J. C. H. Theeuwen and J. H. Qureshi, “LDMOS technology for RF power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 6, pp. 1755–1763, 2012. View at Publisher · View at Google Scholar · View at Scopus
  11. C. S. Kim, J.-W. Park, and H. K. Yu, Trenched Sinker LDMOSFET (TS-LDMOS) Structure for High Power Amplifier Application above 2 GHz, IEDM 01-887, IEEE, 2001.
  12. D. Burdeaux and W. Burger, “Intrinsic Reliability of RF Power LDMOS FETs,” IRPS11-435~443, 2011.