Modeling and Design of Graphene GaAs Junction Solar Cell

Table 1

Simulation parameters for graphene GaAs solar cell.

Parameter	Description	Value
	GaAs band gap	1.42 ev
	Effective density of states in CB	4.35e × 10^17 cm^−3
	Effective density of states in VB	8.16e × 10^18 cm^−3
	GaAs electron affinity	4.07 ev
	GaAs electron mobility, 300 K [23]	No doping: 8000 cm^2/Vs
		N-type doping 1 × 10^14 cm^−3: 7300 cm^2/Vs
		N-type doping 1 × 10^15 cm^−3: 5900 cm^2/Vs
		N-type doping 1 × 10^16 cm^−3: 4600 cm^2/Vs
	GaAs hole mobility, 300 K	No doping: 400 cm^2/Vs
		N-type doping 1 × 10^14 cm^−3: 340 cm^2/Vs
		N-type doping 1 × 10^15 cm^−3: 302 cm^2/Vs
		N-type doping 1 × 10^16 cm^−3: 240 cm^2/Vs