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Advances in Condensed Matter Physics
Volume 2015, Article ID 379746, 7 pages
Research Article

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
3School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received 21 October 2014; Accepted 4 November 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiangming Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employing the Taurus TCAD device simulator. A high BV (breakdown voltage) can be achieved while keeping a low (on-resistance). The simulation results show that the N-drift region dopant concentration has an obvious effect on the BV and and the junction depth affected these values less. There is an optimized length for the second field plate for a given dopant concentration of the N-drift region. Both factors should be optimized together to determine the best DC characteristics. Meanwhile, the effect of the first field plate on the BV and can be ignored. According to the simulation results, 50 V RF LDMOS with an optimized RESURF structure of a double G-shield was fabricated using 0.35 µm technologies. The measurement data show the same trend as the TCAD simulation, where a BV of 118 V and of 26 ohm·mm were achieved.