Advances in Condensed Matter Physics / 2015 / Article / Fig 5

Research Article

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Figure 5

For (a) a high implant dose of  cm−2 and (b) a low implant dose of  cm−2, the crucial electric field distribution along the surface of the N-drift region is determined by the length of the 2nd G-shield.

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