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Advances in Condensed Matter Physics
Volume 2015, Article ID 423074, 5 pages
http://dx.doi.org/10.1155/2015/423074
Research Article

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
2Shanghai HuaHong NEC Electronics Company, Shanghai 201206, China

Received 14 June 2014; Accepted 25 August 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiao-Yu Tang and Ke Dong. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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