Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

<div>Field dependence of the average value of <svg height="9.16067pt" id="M71" style="vertical-align:-3.16062pt" version="1.1" viewbox="-0.0498162 -6.00005 10.015 9.16067" width="10.015pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M487 458L455 460C436 434 425 433 397 433C331 433 279 437 225 437C103 437 52 374 24 338L49 312C100 363 152 379 229 374C210 308 184 213 163 117C158 94 156 74 156 58C156 6 180 -12 211 -12C261 -12 313 27 348 68L332 99C307 76 285 64 267 64C252 64 236 86 250 148L301 373C320 373 344 369 364 369C399 369 435 370 450 372C458 386 470 411 487 458Z" id="g50-241"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="499" vert-adv-y="499"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,5.642,3.001)"><path d="M387 400C387 425 348 451 303 451C247 451 176 414 132 376C69 322 24 228 24 148C24 43 74 -12 147 -12C211 -12 301 33 363 103L346 128C319 99 249 51 193 51C148 51 112 84 112 165C112 230 130 287 154 330C170 359 199 400 243 400C277 400 304 383 326 354C333 345 343 343 354 348C378 360 387 382 387 400Z" id="g50-100"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="411" vert-adv-y="411"></glyph.data></g></svg> and <svg height="9.16067pt" id="M72" style="vertical-align:-3.16062pt" version="1.1" viewbox="-0.0498162 -6.00005 10.1155 9.16067" width="10.1155pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M487 458L455 460C436 434 425 433 397 433C331 433 279 437 225 437C103 437 52 374 24 338L49 312C100 363 152 379 229 374C210 308 184 213 163 117C158 94 156 74 156 58C156 6 180 -12 211 -12C261 -12 313 27 348 68L332 99C307 76 285 64 267 64C252 64 236 86 250 148L301 373C320 373 344 369 364 369C399 369 435 370 450 372C458 386 470 411 487 458Z" id="g50-241"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="499" vert-adv-y="499"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,5.642,3.001)"><path d="M398 365C398 411 356 451 297 451C250 451 198 430 151 397C65 336 24 230 24 139C24 14 97 -12 148 -12C198 -12 284 7 373 104L355 130C306 84 246 53 198 53C132 53 111 109 111 163V189C209 211 398 261 398 365ZM317 351C317 308 273 262 117 225C134 338 189 383 221 399C230 404 249 407 263 407C295 407 317 389 317 351Z" id="g50-102"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="422" vert-adv-y="422"></glyph.data></g></svg> of the RTN under (a) higher and (b) lower gate bias regions. The red lines present MPFAT simulation results for <svg height="9.16067pt" id="M73" style="vertical-align:-3.16062pt" version="1.1" viewbox="-0.0498162 -6.00005 10.015 9.16067" width="10.015pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M487 458L455 460C436 434 425 433 397 433C331 433 279 437 225 437C103 437 52 374 24 338L49 312C100 363 152 379 229 374C210 308 184 213 163 117C158 94 156 74 156 58C156 6 180 -12 211 -12C261 -12 313 27 348 68L332 99C307 76 285 64 267 64C252 64 236 86 250 148L301 373C320 373 344 369 364 369C399 369 435 370 450 372C458 386 470 411 487 458Z" id="g50-241"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="499" vert-adv-y="499"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,5.642,3.001)"><path d="M387 400C387 425 348 451 303 451C247 451 176 414 132 376C69 322 24 228 24 148C24 43 74 -12 147 -12C211 -12 301 33 363 103L346 128C319 99 249 51 193 51C148 51 112 84 112 165C112 230 130 287 154 330C170 359 199 400 243 400C277 400 304 383 326 354C333 345 343 343 354 348C378 360 387 382 387 400Z" id="g50-100"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="411" vert-adv-y="411"></glyph.data></g></svg>.</div>

Advances in Condensed Matter Physics

fig4

Figure 4

Figure 4: Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs 