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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 639218, 9 pages
Review Article

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Department of Information Science and Electronic Engineering, Zhejiang University, No. 38 Zheda Road, Hangzhou 310027, China

Received 3 October 2014; Accepted 1 December 2014

Academic Editor: Rui Zhang

Copyright © 2015 Jiabao Sun and Jiwu Lu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation). It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET) device.