Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

<div>Process flow of the OPO treatment on Al<sub>2</sub>O<sub>3</sub>/Ge gate stack [<a href="/journals/acmp/2015/639218/#B45">46</a>].</div>

Advances in Condensed Matter Physics

Figure 9: Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs 