Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Table 1

Performance comparison of published detector [7] and our detector ( = 0.5 V and light intensity = 1 mW/cm²).

	Published detector [7]	Calculated result according to [7]	Our detector ( = 0.5 V)
Photocurrent	0.1 A; (5 m × 2 m)	1.3 A; (10 m × 0.55 m)	110 A; (10 m × 0.55 m)
Dark current	2.9 pA; (5 m × 2 m)	38 pA; (10 m × 0.55 m)	32 pA; (10 m × 0.55 m)