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Advances in Condensed Matter Physics
Volume 2015, Article ID 654840, 26 pages
Review Article

Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Faculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, Russia

Received 6 April 2015; Revised 19 July 2015; Accepted 18 August 2015

Academic Editor: Ram N. P. Choudhary

Copyright © 2015 A. Pergament et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.