Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

<div>Current-voltage characteristics for V<sub>2</sub>O<sub>3</sub> doped with 1.2 at.% of Cr at different temperatures: 170.5 K (1), 173.3 K (2), 221.0 K (3), and 265.5 K <svg height="11.5564pt" id="M106" style="vertical-align:-2.26807pt" version="1.1" viewbox="-0.0498162 -9.28833 15.3928 11.5564" width="15.3928pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M300 -147C201 -63 143 98 143 270S200 602 300 686L282 710C136 610 70 450 70 271V270C70 89 136 -72 282 -170L300 -147Z" id="g113-41"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="346" vert-adv-y="346"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,4.498,0)"><path d="M456 178V225H360V632H320C217 496 115 347 20 206V178H280V106C280 40 276 34 189 27V0H445V27C364 34 360 39 360 106V178H456ZM280 225H82C149 335 214 431 278 520H280V225Z" id="g113-53"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="480" vert-adv-y="480"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.738,0)"><path d="M275 270C275 450 212 609 64 710L45 686C145 604 203 442 203 270S147 -63 45 -147L64 -170C213 -68 275 89 275 270Z" id="g113-42"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="346" vert-adv-y="346"></glyph.data></g></svg> [<a href="/journals/acmp/2015/654840/#B51">51</a>].</div>

Advances in Condensed Matter Physics

fig9

Figure 9

Figure 9: Electrical Switching in Thin Film Structures Based on Transition Metal Oxides 