TY - JOUR
A2 - Zhang, Rui
AU - Liu, Lifeng
AU - Hou, Yi
AU - Zhang, Weibing
AU - Han, Dedong
AU - Wang, Yi
PY - 2015
DA - 2015/04/23
TI - Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
SP - 714097
VL - 2015
AB - HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.
SN - 1687-8108
UR - https://doi.org/10.1155/2015/714097
DO - 10.1155/2015/714097
JF - Advances in Condensed Matter Physics
PB - Hindawi Publishing Corporation
KW -
ER -