TY - JOUR A2 - Zhang, Rui AU - Liu, Lifeng AU - Hou, Yi AU - Zhang, Weibing AU - Han, Dedong AU - Wang, Yi PY - 2015 DA - 2015/04/23 TI - Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices SP - 714097 VL - 2015 AB - HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment. SN - 1687-8108 UR - https://doi.org/10.1155/2015/714097 DO - 10.1155/2015/714097 JF - Advances in Condensed Matter Physics PB - Hindawi Publishing Corporation KW - ER -