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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 714097, 5 pages
Research Article

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Institute of Microelectronics, Peking University, Beijing 100871, China

Received 22 January 2015; Accepted 15 February 2015

Academic Editor: Rui Zhang

Copyright © 2015 Lifeng Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.