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Advances in Condensed Matter Physics
Volume 2015, Article ID 762498, 6 pages
http://dx.doi.org/10.1155/2015/762498
Research Article

Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

1College of Communication Engineering, Chongqing University, Chongqing 400044, China
2National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, China

Received 13 January 2015; Revised 27 May 2015; Accepted 28 June 2015

Academic Editor: Wai Tung Ng

Copyright © 2015 Jingjing Jin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jingjing Jin, Shengdong Hu, Yinhui Chen, et al., “Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer,” Advances in Condensed Matter Physics, vol. 2015, Article ID 762498, 6 pages, 2015. https://doi.org/10.1155/2015/762498.