Research Article
Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer
Table 1
Device parameters used in the simulations.
| Parameter | Value |
| Thickness of the SOI layer, (μm) | 2 | Thickness of the buried oxide layer, (μm) | 1 | Thickness of P-substrate, (μm) | 2 | Thickness of the LVID profile, (μm) | 0.1–2 | Length of n-type drift region, (μm) | 10 | Length of the p-well, (μm) | 5 | Concentration of P-substrate, (cm−3) | 8 × 1014 | Concentration of p-well, (cm−3) | 3 × 1016 | Concentration of uniform doping in drift region, (cm−3) | Optimized | The slope of the LVID profile, (cm−4) | Optimized |
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