Research Article

Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Table 1

Device parameters used in the simulations.

ParameterValue

Thickness of the SOI layer, (μm)2
Thickness of the buried oxide layer, (μm)1
Thickness of P-substrate, (μm)2
Thickness of the LVID profile, (μm)0.1–2
Length of n-type drift region, (μm)10
Length of the p-well, (μm)5
Concentration of P-substrate, (cm−3)8 × 1014
Concentration of p-well, (cm−3)3 × 1016
Concentration of uniform doping in drift region, (cm−3)Optimized
The slope of the LVID profile, (cm−4)Optimized