High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

<div>Phi (<svg height="12.3655pt" id="M36" style="vertical-align:-3.40338pt" version="1.1" viewbox="-0.0498162 -8.96212 7.6157 12.3655" width="7.6157pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M552 243C552 372 474 431 385 468C378 471 378 492 382 510L419 675L401 683L345 637L224 54C173 71 118 128 118 218C118 323 174 382 270 423L255 458C130 420 24 339 24 204C24 97 93 14 213 -8L188 -131C170 -220 197 -250 217 -257L224 -254L278 -7C427 -3 552 98 552 243ZM478 228C478 124 408 37 287 40L363 405C401 395 478 336 478 228Z" id="g50-243"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="576" vert-adv-y="576"></glyph.data></g></svg>) scan with tilted <svg height="9.59914pt" id="M37" style="vertical-align:-3.59909pt" version="1.1" viewbox="-0.0498162 -6.00005 7.83754 9.59914" width="7.83754pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M575 436L567 451L489 425L326 195L289 372C279 418 263 451 236 451C205 451 159 418 109 339L134 317C165 358 183 373 195 373C206 373 209 367 219 330C231 286 250 191 263 120L52 -167C21 -209 27 -254 45 -275H54C104 -191 202 -45 273 58L320 -164C333 -229 358 -257 385 -257C413 -257 458 -239 519 -145L493 -119C453 -170 429 -179 419 -179S406 -170 397 -130L337 136C397 220 537 396 575 436Z" id="g50-244"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="593" vert-adv-y="593"></glyph.data></g></svg> for twin crystal detection.</div>

Advances in Condensed Matter Physics

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Figure 1