Advances in Condensed Matter Physics / 2015 / Article / Fig 4

Research Article

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Figure 4

AFM image of SiGe layer on -plane sapphire: (a) 1μm × 1μm area of a SiGe and (b) line profile of cross-section measured along the dark line in (a).

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