Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs

Figure 1

Schematic representation of the FD-SSOI N-TFET used in this paper. Poisson’s equation is solved on the three regions I, II, and III, corresponding to the depletion regions induced by the junctions inside the source and drain (I and III) and the intrinsic region (II).