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Advances in Condensed Matter Physics
Volume 2015, Article ID 864972, 1 page
http://dx.doi.org/10.1155/2015/864972
Editorial

Si- and Ge-Based Electronic Devices

1Zhejiang University, Hangzhou 310027, China
2The University of Tokyo, Tokyo 113-8656, Japan
3National Institute of Standards & Technology, Washington, DC 20899, USA

Received 26 March 2015; Accepted 26 March 2015

Copyright © 2015 Yi Zhao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

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