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Advances in Condensed Matter Physics
Volume 2015, Article ID 920805, 6 pages
Research Article

Photoelectric Characteristics of Double Barrier Quantum Dots-Quantum Well Photodetector

Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, China

Received 26 November 2014; Accepted 6 January 2015

Academic Editor: Wen Lei

Copyright © 2015 M. J. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The photodetector based on double barrier AlAs/GaAs/AlAs heterostructures and a layer self-assembled InAs quantum dots and In0.15Ga0.85As quantum well (QW) hybrid structure is demonstrated. The detection sensitivity and detection ability under weak illuminations have been proved. The dark current of the device can remain at 0.1 pA at 100 K, even lower to  A, at bias of −1.35 V. Its current responsivity can reach about  A/W when 1 pw 633 nm light power and −4 V bias are added. Meanwhile a peculiar amplitude quantum oscillation characteristic is observed in testing. A simple model is used to qualitatively describe. The results demonstrate that the InAs monolayer can effectively absorb photons and the double barrier hybrid structure with quantum dots in well can be used for low-light-level detection.