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Advances in Condensed Matter Physics
Volume 2016, Article ID 2943173, 10 pages
http://dx.doi.org/10.1155/2016/2943173
Research Article

Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics

1Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2Division of Physics, Institute of Liberal Education, School of Medicine, Nihon University, 30-1 Ooyaguchi-kamicho, Itabashi-ku, Tokyo 173-8610, Japan

Received 20 October 2015; Revised 1 March 2016; Accepted 3 March 2016

Academic Editor: Jörg Fink

Copyright © 2016 Yuji Noguchi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yuji Noguchi, Ryotaro Inoue, and Masaru Miyayama, “Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics,” Advances in Condensed Matter Physics, vol. 2016, Article ID 2943173, 10 pages, 2016. https://doi.org/10.1155/2016/2943173.