Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 1

Experimental dependence of the barrier height of metal/4H-n-SiC on the electron work function of the metals [7–23]. Red curve-theoretical dependence according to the Schottky theory (the electron affinity of 4H-SiC,  eV [25]).