Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 3

RBS spectra for as-deposited and annealed at 600°C, 1050°C, and 1100°C contacts: (a) n-SiC/Ni₂Si with FL-Si; (b) n-SiC/Ni₂Si with FL-Ni [26].

(a)

(b)