Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 7

Results obtained from plan-view specimen of the contact annealed at 600°C: (a) plan-view TEM micrograph; (b) map representing XEDS nickel/silicon signal ratio obtained for the same area as TEM image presented in (a); (c) selected area diffraction pattern obtained for the area marked with the circle in (a) and (b); (d) NBD pattern obtained for a grain located in the area with small grains.

(a)

(b)

(c)

(d)