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Advances in Condensed Matter Physics
Volume 2017 (2017), Article ID 5038462, 12 pages
Research Article

Low Temperature Conductivity in -Type Noncompensated Silicon below Insulator-Metal Transition

1Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus
2Belarusian State University, Nezalezhnastsi Av. 4, 220030 Minsk, Belarus
3National Research Nuclear University (MEPHI), Kashirskoe Highway 31, Moscow 115409, Russia

Correspondence should be addressed to S. L. Prischepa

Received 17 November 2016; Revised 4 January 2017; Accepted 22 January 2017; Published 14 February 2017

Academic Editor: Da-Ren Hang

Copyright © 2017 A. L. Danilyuk et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito, and S. L. Prischepa, “Low Temperature Conductivity in -Type Noncompensated Silicon below Insulator-Metal Transition,” Advances in Condensed Matter Physics, vol. 2017, Article ID 5038462, 12 pages, 2017. doi:10.1155/2017/5038462