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Advances in Condensed Matter Physics
Volume 2017, Article ID 6747853, 6 pages
https://doi.org/10.1155/2017/6747853
Research Article

Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

1Namangan Engineering Pedagogical Institute, 160103 Namangan, Uzbekistan
2Physico-Technical Institute, NGO “Physics-Sun”, Academy of Sciences of Uzbekistan, 100084 Tashkent, Uzbekistan

Correspondence should be addressed to U. I. Erkaboev; ur.liam@3891veobakre

Received 10 November 2016; Accepted 26 February 2017; Published 20 March 2017

Academic Editor: Sergio E. Ulloa

Copyright © 2017 G. Gulyamov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The influence of pressure on the oscillations of Shubnikov-de Haas (ShdH) and de Haas-van Alphen (dHvA) in semiconductors is studied. Working formula for the calculation of the influence of hydrostatic pressure on the Landau levels of electrons is obtained. The temperature dependence of quantum oscillations for different pressures is determined. The calculation results are compared with experimental data. It is shown that the effect of pressure on the band gap is manifested to oscillations and ShdH and dHvA effects in semiconductors.