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Advances in Condensed Matter Physics
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Advances in Condensed Matter Physics
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2017
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Article
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Fig 3
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Research Article
Fast Switching 4
H
-SiC
P-i-n
Structures Fabricated by Low Temperature Diffusion of Al
Figure 3
The dependence of capacitance (a) and the value
(b) for one of the diodes under reverse voltages measured at 1 MHz.
(a)
(b)