Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Figure 5

Impedance of the diode structure at different frequencies at direct (a) and reverse (b) bias (●: 5 kHz, ▲: 10 kHz, ▼: 15 kHz, ■: 20 kHz, ◄: 30 kHz).

(a)

(b)