Research Article
Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory
Figure 3
Temperature dependencies of the frat band voltage shift (1–3) and the ones of the reduced mobile ion density (5, 6) for the MOS stacks with different values of , cm−2⋅eV−1: (1, 2, 4)—; (3, 5)—. Substrate: (1, 3–5)—-Si, (2)—-Si.