Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Table 1

The parameters of the oxygen ion transport in the YSZ films in the MOM and MOS stacks determined by various methods.

Substrate	Sublayer; material	,; nm	,; nm	,; eV				,; cm^−3 (500 K)
						TD	QC			TD
TiN/Ti	Zr	3	10	—	—	—	0.53	—	—	—
TiN	–//–	–//–	40	—	0.55	0.55	0.53	—
–//–	–//–	8	40	—	0.56	0.46	—	—
TiN/Ti	Ta	8	15	—	0.55	—	—	—		—
TiN/Ti	Zr	3	40	—	0.59	—	—	—		—
-Si	–//–	–//–	–//–	0.50	—	—	—		—	—
–//–	Та	–//–	–//–	0.29	0.30	—	—			—
-Si	Zr	–//–	–//–	0.50	—	0.53	—			—

Measuring method: —C-V measurements of the MIS stacks, —dynamic I-V curves, TD—thermal depolarization, QC—quasistatic capacitance. underestimate value (see the details in the text).