Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories

<div>Experimental <svg height="10.5647pt" id="M66" style="vertical-align:-1.928801pt" version="1.1" viewbox="-0.0498162 -8.6359 28.7198 10.5647" width="28.7198pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M429 650H175L169 622C251 614 259 612 244 532L174 152C163 91 152 37 135 -6C109 -72 67 -101 23 -113L33 -144C45 -143 73 -134 102 -119C186 -76 229 -1 254 133L327 532C341 609 347 613 423 622L429 650Z" id="g113-75"></path></g><g transform="matrix(.013,0,0,-0.013,8.785,0)"><path d="M535 230V280H52V230H535Z" id="g117-33"></path></g><g transform="matrix(.013,0,0,-0.013,19.321,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g></svg> characteristics (circles) and theoretical curves (solid lines); full circles are for positive gate bias and empty circles for negative one.</div>

Advances in Condensed Matter Physics

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Figure 6

Figure 6: Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories 

Figure 6 | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories 