Research Article
Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories
Figure 8
characteristics of the structures after write (+5 V for 60 s, thick line) and erase (−5 V for 60 s, thin line) cycles. For comparison characteristic of the fresh sample (Figure 1) is shown as dotted line.